SiC MOSFET Product Select

RootPower SiC Product Overview

SiC MOSFET

SiC MOSFET

Wafer

TO-263

TO-263

-7L

TO-247

-3L

TO-247

-4L

SOT

-277

비고

BVDS

ID(A)

@25℃

Rds(on)mΩ

Bare Die

 

 

 

 

 

650

30

60

RS065R060

 
 

●

●

 

Gen1

60

35

RS065R035

 
 

●

●

 

Gen1

90

25

RS065R025

 
 
▲
▲
■

Gen2

▲ : 2026 Q2, ■ : 2026 Q3 

1200

30

80

RS120R080

 

●

▲ 
 
 

Gen1

▲ : 2026 Q2

60

40

RS120R040

 

 ▲ 
▲

●

 

Gen1

▲ : 2026 Q2  

90

25

RS120R025

 

 

 

●

 ■

Gen1

■ : 2026 Q3  

90

35

RS120R035

 
 
 

●

 ■ 

Gen2

■ : 2026 Q3 

100

17

RS120R017

 
 
▲

●

■

Gen2

▲ : 2026 Q2, ■ : 2026 Q3

186

14

RS120R014

 

 

▲ 

●

■

Gen2

▲ : 2026 Q2, ■ : 2026 Q3

186

11

RS120R011

 
 
▲

●

■

Gen2

▲ : 2026 Q2, ■ : 2026 Q3

1700

5

1000

RS170R1K0

 ■
 
■
 
■ 

Gen1

■ : 2026 Q3

75

40

RS170R040

 
 
 
▲ 
 

Gen1

▲ : 2026 Q2, ■ : 2026 Q3

●  In Production    ▲ Under Development     ■  In Planning

SiC SBD

SiC SBD 

Wafer

TO-252

TO-263

TO-220F-2L

TO-220-2L

TO-247-3L

TO-247-2L

Remark

BV

IF(A)

Tc=150℃

VF(V)

  at Tc=25℃

Bare Die

 

 

 

 

 
 

650

6

1.40

RD06S065

●

●

●

●

 
 
 

8

1.40

RD08S065

●

●

●

●

 
 

℃

10

1.40

RD10S065

 

● 

● 

● 

 
 
 

16

1.40

RD16S065

 
 
 

●

●

 
 

20

1.40

RD20S065

 

 

 

●

●

●

 

30

1.40

RD30S065

 
 
 

●

●

●

 

40

1.40

RD40S065

 
 
 
 

●

●

2*20A (2Chip)

60

1.40

RD60S065

 
 
 
 

●

●

2*30A (2Chip)

75

1.40

RD75S065

 
 
 
 
 

●

 

1200

5

1.45

RD05S120

●

●

●

●

 
 
 

10

1.45

RD10S120

●

●

●

●

 
 
 

20

1.45

RD20S120

 

● 

 

●

●

●

 

30

1.45

RD30S120

 
 
 
 

●

●

 

40

1.45

RD40S120

 
 
 
 

●

●

 

60

1.45

RD60S120

 
 
 
 
 ▲
▲ 

2*30A (2Chip)

▲ : 2025 Q4

1700

12

1.45

RD12S170

 
 
 
▲
 
 ▲
▲ : 2026 Q1

20

1.45

RD20S170

 
 
 
▲
 
 ▲

▲ : 2026 Q1

●  In Production    ▲ Under Development     ■  In Planning

SJ MOSFET (ODM)

SJ MOSFET (ODM)

Wafer

TO-252

TO-263

TO-220F

-3L

TO-220

-3L

Toll 

PKG

TO-247

-3L

비고

BVDS

ID(A)

Ron(mΩ) Max

Bare Die

 

 

 

 

 

 

600

8

650

RM060R650F

●

 

● 

 
 
 
 

11

360

RM060R360

●

●

●

●

 

 

 

12

310

RM060R310

●

●

●

 
 

 

 

15

280

RM060R280

●

●

●

 
 

 

 

22

180

RM060R180

 

●

●

 
 

 

Fast Trr (In FRD) 

21

165

RM060R165F

 

●

●

●

 

●

Fast Trr (In FRD)

26

135

RM060R135F

 

●

●

●

 

●

Fast Trr (In FRD)

26

135

RM060R135

 

● 

●

 
 

●

 

28

120

RM060R120F

 
 

●

●

●

●

Fast Trr (In FRD)

38

105

RM060R105

 

●

●

 
 

●

 

35

95

RM060R095F

 

● 

●

●

●

●

Fast Trr (In FRD)

50

75

RM060R075F

 

 

●

● 

●

●

Fast Trr (In FRD)

55

65

RM060R065F

 
 

●

●

●

●

Fast Trr (In FRD)

76

41

RM060R041F

 
 
 
 

●

●

Fast Trr (In FRD)

80

29

RM060R029F

 
 
 
 
 

●

Fast Trr (In FRD)

102

26

RM060R026F

 
 
 
 
 

●

Fast Trr (In FRD)

105

22

RM060R022F

 
 
 
 
 

●

Fast Trr (In FRD)

120

17

RM060R017F

 
 
 
 
 

●

Fast Trr (In FRD)

650

4.5

950

RM065R950

●

 

●

●

 
 
 

8

650

RM065R650

●

 

●

 
 
 

 

9

550

RM065R550

●

 

●

 
 
 

 

10.5

380

RM065R380

●

●

●

●

 
 
 

14

340

RM065R340F

●

●

●

 
 
 

Fast Trr (In FRD)

20

190

RM065R190F

 

●

●

●

 

●

Fast Trr (In FRD)

25

140

RM065R140F

 

●

●

●

 

●

Fast Trr (In FRD)

28

120

RM065R120F

 

●

●

●

●

●

Fast Trr (In FRD)

35

100

RM065R100F

 

●

●

●

●

●

Fast Trr (In FRD)

52

76

RM065R076F

 

●

●

●

●

●

Fast Trr (In FRD)

55

65

RM065R065F

 

●

●

 

●

●

Fast Trr (In FRD)

70

41

RM065R041F

 
 
 
 
 

●

Fast Trr (In FRD)

80

38

RM065R038F

 
 
 
 
 

●

Fast Trr (In FRD)

105

22

RM065R022F

 
 
 
 
 

●

Fast Trr (In FRD)

700

4.5

950

RM070R950

●

 

●

 
 
 
 

8

650

RM070R650

●

 

●

 
 
 
 

10.5

380

RM070R380

●

 

●

 
 
 
 

20

190

RM070R190F

 
 

●

 
 
 

Fast Trr (In FRD)

800

3.8

1400

RM080R950

●

 

●

●

 
 
 

5

900

RM080R650

●

 

●

 
 
 
 

10

650

RM080R550

●

 

●

●

 
 
 

11

550

RM080R380

●

 

●

●

 
 
 

17

360

RM080R340F

 

●

●

●

 
 

Fast Trr (In FRD)

18

250

RM080R190F

 

●

●

●

 

●

Fast Trr (In FRD)

23

180

RM080R140F

 

●

●

●

 

●

Fast Trr (In FRD)

28

140

RM080R120F

 

●

 
 
 
 

Fast Trr (In FRD)

●  In Production    ▲ Under Development     ■  In Planning

SJ MOSFET (OEM)

SJ MOSFET (OEM)

Wafer

TO-252

TO-263

TO-220F

-3L

TO-220

-3L

Toll 

PKG

TO-247

-3L

비고

BVDS

ID(A)

Ron(mΩ) Max

Bare Die

 

 

 

 

 

 

900

2.5

2500

RM090R2K5

●

 

●

●

 
 
 

6

1400

RM090R1K4

●

 

●

 
 
 
 

8.5

1000

RM090R1K0F

●

●

●

●

 
 
 

9

800

RM090R800

●

●

●

●

 
 
 

11

450

RM090R450

●

●

●

●

 
 
 

14.5

300

RM090R300F

 

●

●

●

 

●

Fast Trr (In FRD)

25

160

RM090R160F

 
 
 
 
 

●

Fast Trr (In FRD)

50

80

RM090R080F

 
 
 
 
 

●

Fast Trr (In FRD)

950

2.5

2500

RM095R2K5

●

 

●

●

 
 
 

8.5

1000

RM095R1K0

●

 

●

●

 
 
 

10

800

RM095R800F

 

●

●

●

 
 

Fast Trr (In FRD)

12

620

RM095R620F

 

●

●

●

 
 

Fast Trr (In FRD)

15

340

RM095R340F

 

●

●

●

 

●

Fast Trr (In FRD)

21

160

RM095R160F

 

 
 
 
 

●

Fast Trr (In FRD)

1000

2.2

2500

RM100R2K5

●

 

●

 
 
 
 

11

700

RM100R700

 
 

●

●

 
 
 

13

450

RM100R450

 

●

●

 
 
 
 

1200

12

690

RM120R690

 

●

●

●

 

●

 

 

●  In Production    ▲ Under Development     ■  In Planning

#2720, Sambo Techno Tower, 122, Jomaru-ro 385beon-gil, Wonmi-gu, Bucheon-si, Gyeonggi-do, 14556, Korea

Tel. 070-4349-0077  l  Fax. 02-6280-2023

E-mail. rootsemi@rootsemicon.co.kr


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